Special Scientific Events

Organizers:
  Bernd Kabius, Argonne National Laboratory
  Christian Kisielowski, Lawrence Berkeley National Laboratory
  Ray Phaneuf, University of Maryland
  Frances Ross, IBM T. J. Watson Research Center

Featured Invited Speakers:
  J.C.H. Spence, D. Van Dyck, H. Lichte

Recent progress with the correction of lens aberrations is already beginning to revolutionize electron microscopy. Projections indicate that this technological development will impact the majority of electron optical instrumentation: TEM, STEM, SEM, electron beam lithography, as well as LEEM, PEEM and even focused ion beams. For example, in situ transmission electron microscopes with suitably large pole gaps and a resolution approaching one Angstrom or instruments operating between 100 - 200 kV with deep sub-Angstrom resolution will emerge in the foreseeable future and they will be of benefit to biological, chemical, and materials sciences. This session welcomes technological and numerical contributions towards the correction of aberrations in charged particle optics. Equally important are scientific contributions that discuss the current experimental or theoretical limitations imposed by lens aberrations and future goals that will be achievable by aberration correction.

We expect that the 2004 pre M&M meeting of the Focused Interest Group will cover a broad range of future oriented technological and scientific advances, including in-situ experimentation in different types of electron microscopes, electron tomography, the development of diffraction techniques, and the investigation of amorphous materials.

• Sub-Angstrom and sub-eV resolution with the analytical SATEM
     G. Benner et al., Zeiss, Germany
  
  
• To correct or not to correct? Strategies if you do and strategies if you don�t
     R. Dunin-Borkowski, University of Cambridge, UK
  
  
• First experimental proof of spatial resolution improvement in a monochromized and Cscorrected TEM
     B. Freitag et al., FEI Electron Optics, The Netherlands
  
  
• Measuring physical properties at the sub-nm scale in a STEM: the Orsay SuperSTEM project
     A. Gloter et al. Universite' Paris Sud, France
  
  
• Design of an electron optical system for Cc correction
     M. Haider, CEOS, Germany
  
  
• A new double-corrected HREM/STEM and its applications for advanced materials research
     J.L. Hutchison, University of Oxford, UK
  
  
• Prospects for bright field and dark field electron tomography on a discrete grid
     J. Jinschek et al., Lawrence Berkeley National Laboratory, USA
  
  
• Toward ultrafast electron microscopy
     W. King, Lawrence Livermore National Laboratory, USA
  
  
• Direct and Indirect Aberration Correction and Compensation for sub �ngstrom imaging
     A. I. Kirkland, University of Oxford, UK
  
  
• Electron holography with Cs-corrected TEM
     H. Lichte et al., Institute of Structure Physics, Dresden University, Germany
  
  
• Correction of spherical aberration in a Focused Ion Beam system by means of space charge
     J. Orloff, University of Maryland, USA
  
  
• Materials applications of aberration-corrected STEM
     S. Pennycook, Oak Ridge National Laboratory, USA, and O. Krivanek, NION, USA
  
  
• Magnetic imaging of information storage materials
     A. Petford-Long, University of Oxford, UK
  
  
• Outline of the mirror corrector for SMART and PEEM3
     H. Rose, University of Darmstadt, Germany
  
  
• In-situ experiments in the high-voltage microscope in Stuttgart - Need for better resolution
     M. Ruehle, MPI Stuttgart, Germany
  
  
• Opportunities for monochromated ELS in materials science
     J.C.H. Spence et al., Arizona State University and Lawrence Berkeley National Laboratory, USA
  
  
• HRTEM image simulation of carbon nanotubes in an actual growth environment
     S. Takeda et al., University of Osaka, Japan
  
  
• A sharper view of Randomness? What aberration-corrected imaging of amorphous materials can reveal
     M. Treacy, Arizona State University. USA
  
  
• Quantitative aberration-corrected transmission electron microscopy
     K. Urban, Institut fur Festkorperforschung and Ernst Ruska-Centrum, Julich, Germany
  
  
• Atomic resolution electron tomography: a dream?
     D. Van Dyck, University of Antwerp, Belgium
  
  
• Developments in XEDS and SCEM as they relate to aberration corrected microscopes
     N. Zaluzec, Argonne National Laboratory, USA
  

Abstracts must be submitted between May 15, 2004 and June 30, 2004 to a different web site, provided by Cambridge University Press, at http://bono.cup.org/premeeting. Abstracts will be published by Cambridge Journals Online as Volume 10, supplement 3 of Microscopy and Microanalysis. For submission, please log into the web site and follow the instructions. These delayed deadlines will maximize discussion of late breaking developments.

Looking forward to sharing our excitement with you in Savannah,